sot23 n-channel enhancement mode vertical dmos fet issue 3 - january 1996 features * 60volt v ds *r ds(on) = 5 w partmarking detail C mv absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 60 v continuous drain current at t amb =25c i d 0.15 ma pulsed drain current i dm 3a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. drain-source breakdown voltage bv dss 60 90 v i d =100 m a, v gs =0v gate-source threshold voltage v gs(th) 0.8 3 v i d =1ma, v ds = v gs gate-body leakage i gss 10 na v gs =15v, v ds =0v zero gate voltage drain current i dss 0.5 m a v ds =25v, v gs =0v static drain-source on-state resistance (1) r ds(on) 5 w v gs =10v, i d =200ma forward transconductance (1)(2) g fs 200 ms v ds =10v, i d =200ma input capacitance (2) c iss 60 pf v ds =10v, v gs =0v, f=1mhz turn-on delay time (2)(3) t d(on) 10 ns v dd ? -15v, i d =600ma turn-off delay time (2)(3) t d(off) 10 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator spice parameter data is available upon request for this device for typical characteristics graphs refer to zvn3306f datasheet. bs170f d g s sot23 3 - 54
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